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STP25NM60N - STF25NM60N STB25NM60N/-1 - STW25NM60N
N-CHANNEL 600V 0.140-20A TO-220/FP/D/IPAK/TO-247 SECOND GENERATION MDmeshTM MOSFET
PRODUCT PREVIEW
Table 1: General Features
TYPE STB25NM60N-1 STF25NM60N STP25NM60N STW25NM60N STB25NM60N
s s s s s
Figure 1: Package
RDS(on) < 0.170 < 0.170 < 0.170 < 0.170 < 0.170 ID 20 A 20(*) A 20 A 20 A 20 A
VDSS (@Tjmax) 650 V 650 V 650 V 650 V 650 V
3 1 2
1
3 2
TO-220
3 1
TO-220FP
s
WORLD'S LOWEST ON RESISTANCE TYPICAL RDS(on) = 0.140 HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE
DPAK
3 12
3
IPAK TO-247 Figure 2: Internal Schematic Diagram
2 1
DESCRIPTION The STP25NM60N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters APPLICATIONS The MDmeshTM II family is very suitable for increase the power density of high voltage converters allowing system miniaturization and higher efficiencies.
Table 2: Order Code
SALES TYPE STB25NM60N-1 STF25NM60N STP25NM60N STW25NM60N STB25NM60N MARKING B25NM60N F25NM60N P25NM60N W25NM60N B25NM60N PACKAGE IPAK TO-220FP TO-220 TO-247 DPAK PACKAGING TUBE TUBE TUBE TUBE TAPE & REEL
Rev. 4 June 2005
This is preliminary information on a new product now in development. Details are subject to change without notice.
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Table 3: Absolute Maximum ratings
Symbol Parameter Value TO-220/IPAK TO-247/DPAK VDS VDGR VGS ID ID IDM (1) PTOT dv/dt (2) Tstg Tj Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature 20 12.8 80 160 1.28 TBD - 55 to 150 150 600 600 25 20 (*) 12.8 (*) 80 (*) 40 0.32 TO-220FP V V V A A A W W/C V/ns C C Unit
(*) Limited only by maximum temperature allowed (1) Pulse width limited by safe operating area (2) ISD 20 A, di/dt 400 A/s, VDD =80%V(BR)DSS.
Table 4: Thermal Data
TO-220/IPAK TO-247/DPAK Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 0.78 62.5 300 TO-220FP 3.1 C/W C/W C
Table 5: Avalanche Characteristics
Symbol IAS EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAS, VDD = 50 V) Max Value TBD TBD Unit A mJ
ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) Table 6: On /Off
Symbol V(BR)DSS dv/dt(2) IDSS IGSS VGS(th) RDS(on Parameter Drain-source Breakdown Voltage Drain Source Voltage Slope Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions Min. ID = 1 mA, VGS = 0 Vdd=TBD, Id=TBD, Vgs=TBD VDS = Max Rating VDS = Max Rating, TC = 125C VGS = 20 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 10 A 2 3 0.140 600 TBD 1 10 100 4 0.170 Value Typ. Max. V V/ns A A nA V Unit
(2) Characteristic value at turn off on inductive load
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ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic
Symbol gfs (1) Ciss Coss Crss COSS eq (3). RG Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Gate Input Resistance Test Conditions VDS = 15V , ID= 10A VDS = 25 V, f = 1 MHz, VGS = 0 Min. Typ. 17 2565 511 77 TBD 2 Max. Unit S pF pF pF pF
VGS = 0 V, VDS = 0 to 480 V f=1 MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain VDD = 300 V, ID = 10 A, RG = 4.7 , VGS = 10 V (see Figure 4) VDD = 480 V, ID = 20 A, VGS = 10 V (see Figure 7)
td(on) tr td(off) tf Qg Qgs Qgd
Turn-on Delay Time Rise Time Turn-off-Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
TBD TBD TBD TBD 93 TBD TBD
ns ns ns ns nC nC nC
Table 8: Source Drain Diode
Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 20 A, VGS = 0 ISD = 25 A, di/dt = 100 A/s VDD = 100V (see Figure 5) ISD = 25 A, di/dt = 100 A/s VDD = 100V, Tj = 150C (see Figure 5) TBD TBD TBD TBD TBD TBD Test Conditions Min. Typ. Max. 20 80 1.3 Unit A A V ns C A ns C A
(1) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. (3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
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STP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60N
Figure 3: Unclamped Inductive Load Test Circuit Figure 6: Unclamped Inductive Wafeform
Figure 4: Switching Times Test Circuit For Resistive Load
Figure 7: Gate Charge Test Circuit
Figure 5: Test Circuit For Inductive Load Switching and Diode Recovery Times
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TO-220 MECHANICAL DATA
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
oP
Q
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TO-220FP MECHANICAL DATA
mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O
A
B
L3 L6 L7
F1 F
D
G1 H
F2
L2 L5
E
123
L4
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G
STP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60N
TO-262 (I2PAK) MECHANICAL DATA
mm. DIM. MIN. A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 TYP MAX. 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 MIN. 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 TYP. MAX. 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 inch
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TO-247 MECHANICAL DATA
mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620
DIM. A A1 b b1 b2 c D E e L L1 L2 oP oR S
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TO-252 (DPAK) MECHANICAL DATA
mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0o 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.8 1.00 8o 0.024 0o TYP. MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 0.039 0o inch TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398
DIM.
P032P_B
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D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0795 0.960 3.937 1.197 BULK QTY 1000 1.039 0.520 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 0.35 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. 0.413 0.618 0.059 0.062 0.065 0.449 0.189 0.153 0.468 0.075 1.574 0.0098 0.0137 0.933 0.956 MAX. 0.421 0.626 0.063 0.063 0.073 0.456 0.197 0.161 0.476 0.082
BASE QTY 1000
* on sales type
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Table 9: Revision History
Date 30-Nov-2004 22-Mar-2005 23-May-2005 08-Jun-2005 Revision 1 2 3 4 Description of Changes First Release. Modified title Inserted some values in Tab7 Inserted new row in table 6
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
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